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Home » Igbt / Insulated-gate bipolar transistor » RJP63K2DPP-M9 (IGBT HIGH SPEED 35A 630V)
RJP63K2DPP-M9 (IGBT HIGH SPEED 35A 630V)![]() Ditambahkan pada : April 17th, 2015
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Rp 15.000
Stock : TersediaKode Produk : RJP63K2DPP-M9 Dilihat : 1,866 kali Kategori : Igbt / Insulated-gate bipolar transistor
Bingung Cara Order / Pesan? Customer Service FoxAlfa – Switching Mode Generation siap melayani dan membantu Anda. IGBT high speed buatan Renesas dengan body To-220FL (plastic) Collector current 30A Gate emitter 630V Input capacitance : 680 typical Total gate charge : 20 nC |